Nambari ya Bidhaa ya Mtengenezaji:
HN2A01FE-GR(TE85LF
Product Overview
Mtengenezaji:
Toshiba Semiconductor and Storage
Nambari ya Kipande:
HN2A01FE-GR(TE85LF-DG
Maelezo:
TRANS 2PNP 50V 0.15A ES6
Maelezo ya Kina:
Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 150mA 800MHz 100mW Surface Mount ES6
Hesabu:
12890878
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
HN2A01FE-GR(TE85LF Maalum ya Kiufundi
Kikundi
Bipolar (BJT), Vikundi vya Transistori za Bipolar
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
Tape & Reel (TR)
Mfululizo
-
Hali ya Bidhaa
Obsolete
Aina ya Transistor
2 PNP (Dual)
Sasa - Mkusanyaji (Ic) (Max)
150mA
Voltage - Uvunjaji wa Emitter ya Mkusanyaji (Max)
50V
Ujazaji wa Vce (Max) @ ib, ic
300mV @ 10mA, 100mA
Sasa - Kukatwa kwa Mkusanyaji (Max)
100nA (ICBO)
DC Gain ya Sasa (hFE) (Min) @ Ic, Vce
200 @ 2mA, 6V
Nguvu - Max
100mW
Mzunguko - Mpito
800MHz
Joto la Uendeshaji
150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
SOT-563, SOT-666
Kifurushi cha Kifaa cha Muuzaji
ES6
Nambari ya Bidhaa ya Msingi
HN2A01
Taarifa za Ziada
Kifurushi cha Kawaida
4,000
Majina mengine
HN2A01FE-GR(TE85LFTR
HN2A01FE-GR(TE85LFDKR
HN2A01FE-GR(TE85LFCT
Uainishaji wa Mazingira na Usafirishaji
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Mifano Mbadala
NAMBARI YA SEHEMU
BC857BV,115
MTENGENEZAJI
Nexperia USA Inc.
KIASI KILICHOPATIKANA
23451
Nambari ya Sehemu
BC857BV,115-DG
BEI YA KILA KITU
0.06
AINA YA KUBADILISHA
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