HN1B04FU-GR,LF
Nambari ya Bidhaa ya Mtengenezaji:

HN1B04FU-GR,LF

Product Overview

Mtengenezaji:

Toshiba Semiconductor and Storage

Nambari ya Kipande:

HN1B04FU-GR,LF-DG

Maelezo:

TRANS NPN/PNP 50V 0.15A US6
Maelezo ya Kina:
Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 150MHz 200mW Surface Mount US6

Hesabu:

2765 Pcs Mpya Halisi Katika Hifadhi
12891054
Omba Nukuu
Kiasi
Kiasi cha chini 1
num_del num_add
*
*
*
*
Vo7c
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
TUMA

HN1B04FU-GR,LF Maalum ya Kiufundi

Kikundi
Bipolar (BJT), Vikundi vya Transistori za Bipolar
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
Tape & Reel (TR)
Mfululizo
-
Hali ya Bidhaa
Active
Aina ya Transistor
NPN, PNP
Sasa - Mkusanyaji (Ic) (Max)
150mA
Voltage - Uvunjaji wa Emitter ya Mkusanyaji (Max)
50V
Ujazaji wa Vce (Max) @ ib, ic
250mV @ 10mA, 100mA
Sasa - Kukatwa kwa Mkusanyaji (Max)
100nA (ICBO)
DC Gain ya Sasa (hFE) (Min) @ Ic, Vce
200 @ 2mA, 6V
Nguvu - Max
200mW
Mzunguko - Mpito
150MHz
Joto la Uendeshaji
125°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
6-TSSOP, SC-88, SOT-363
Kifurushi cha Kifaa cha Muuzaji
US6
Nambari ya Bidhaa ya Msingi
HN1B04

Karatasi za Takwimu na Nyaraka

Karatasi za data
HN1B04FU

Taarifa za Ziada

Kifurushi cha Kawaida
3,000
Majina mengine
HN1B04FU-GR(L,F,T)
HN1B04FU-GRLFT
HN1B04FU-GRLFCT
HN1B04FU-GR(LFT)TR-DG
HN1B04FU-GRLF-DG
HN1B04FU-GR(LFT)DKR-DG
264-HN1B04FU-GR,LFCT
HN1B04FU-GR(LFT)CT-DG
HN1B04FU-GRLFINACTIVE
HN1B04FU-GR(LFT)DKR
HN1B04FU-GRLFCT-DG
HN1B04FU-GR,LF(B
264-HN1B04FU-GR,LFDKR
HN1B04FU-GR(LFT)TR
HN1B04FU-GRLFTR-DG
264-HN1B04FU-GR,LFTR
HN1B04FU-GR(LFT)CT
HN1B04FU-GRLF
HN1B04FU-GRLFDKR-DG
HN1B04FU-GRLFDKR
HN1B04FU-GR,LF(T
HN1B04FU-GRLFTR

Uainishaji wa Mazingira na Usafirishaji

Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075

Mifano Mbadala

NAMBARI YA SEHEMU
UMZ1NT1G
MTENGENEZAJI
onsemi
KIASI KILICHOPATIKANA
11000
Nambari ya Sehemu
UMZ1NT1G-DG
BEI YA KILA KITU
0.03
AINA YA KUBADILISHA
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