Nambari ya Bidhaa ya Mtengenezaji:
RN1110MFV,L3F
Product Overview
Mtengenezaji:
Toshiba Semiconductor and Storage
Nambari ya Kipande:
RN1110MFV,L3F-DG
Maelezo:
TRANS PREBIAS NPN 50V 0.1A VESM
Maelezo ya Kina:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
Hesabu:
8000 Pcs Mpya Halisi Katika Hifadhi
12891181
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
jIUl
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
RN1110MFV,L3F Maalum ya Kiufundi
Kikundi
Bipolar (BJT), Mabipolar Transistors ya Pre-Biased ya Kimoja
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
Tape & Reel (TR)
Mfululizo
-
Hali ya Bidhaa
Active
Aina ya Transistor
NPN - Pre-Biased
Sasa - Mkusanyaji (Ic) (Max)
100 mA
Voltage - Uvunjaji wa Emitter ya Mkusanyaji (Max)
50 V
Resistor - Msingi (R1)
4.7 kOhms
DC Gain ya Sasa (hFE) (Min) @ Ic, Vce
120 @ 1mA, 5V
Ujazaji wa Vce (Max) @ ib, ic
300mV @ 500µA, 5mA
Sasa - Kukatwa kwa Mkusanyaji (Max)
100nA (ICBO)
Nguvu - Max
150 mW
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
SOT-723
Kifurushi cha Kifaa cha Muuzaji
VESM
Nambari ya Bidhaa ya Msingi
RN1110
Taarifa za Ziada
Kifurushi cha Kawaida
8,000
Majina mengine
264-RN1110MFV,L3FCT
RN1110MFV(TL3T)TR
RN1110MFV(TL3T)DKR-DG
RN1110MFV(TL3,T)
RN1110MFVL3FTR
RN1110MFVTL3T
RN1110MFVL3F
RN1110MFVL3FTR-DG
RN1110MFVL3FDKR
RN1110MFVL3FDKR-DG
RN1110MFV,L3F(T
RN1110MFV(TL3T)CT
RN1110MFV(TL3T)DKR
RN1110MFV,L3F(B
RN1110MFV(TL3T)CT-DG
RN1110MFVL3FCT
RN1110MFVL3FINACTIVE
RN1110MFV(TL3T)TR-DG
RN1110MFVL3FCT-DG
RN1110MFVL3F-DG
264-RN1110MFV,L3FTR
264-RN1110MFV,L3FDKR
Uainishaji wa Mazingira na Usafirishaji
Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Digi Cheti
Bidhaa Zinazohusiana
RN2104ACT(TPL3)
TRANS PREBIAS PNP 50V 0.08A CST3
RN2112,LF(CT
TRANS PREBIAS PNP 50V 0.1A SSM
RN2108(T5L,F,T)
TRANS PREBIAS PNP 50V 0.1A SSM
