Nambari ya Bidhaa ya Mtengenezaji:
RN2130MFV,L3F
Product Overview
Mtengenezaji:
Toshiba Semiconductor and Storage
Nambari ya Kipande:
RN2130MFV,L3F-DG
Maelezo:
TRANS PREBIAS PNP 50V 0.1A VESM
Maelezo ya Kina:
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
Hesabu:
7970 Pcs Mpya Halisi Katika Hifadhi
12891268
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
FIAZ
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
RN2130MFV,L3F Maalum ya Kiufundi
Kikundi
Bipolar (BJT), Mabipolar Transistors ya Pre-Biased ya Kimoja
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
Tape & Reel (TR)
Mfululizo
-
Hali ya Bidhaa
Active
Aina ya Transistor
PNP - Pre-Biased
Sasa - Mkusanyaji (Ic) (Max)
100 mA
Voltage - Uvunjaji wa Emitter ya Mkusanyaji (Max)
50 V
Resistor - Msingi (R1)
100 kOhms
Resistor - Msingi wa Emitter (R2)
100 kOhms
DC Gain ya Sasa (hFE) (Min) @ Ic, Vce
100 @ 10mA, 5V
Ujazaji wa Vce (Max) @ ib, ic
300mV @ 500µA, 5mA
Sasa - Kukatwa kwa Mkusanyaji (Max)
100nA (ICBO)
Nguvu - Max
150 mW
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
SOT-723
Kifurushi cha Kifaa cha Muuzaji
VESM
Nambari ya Bidhaa ya Msingi
RN2130
Karatasi za Takwimu na Nyaraka
Karatasi za data
Taarifa za Ziada
Kifurushi cha Kawaida
8,000
Majina mengine
264-RN2130MFV,L3FCT
264-RN2130MFV,L3FDKR
RN2130MFVL3F-DG
RN2130MFVL3F
264-RN2130MFV,L3FTR
Uainishaji wa Mazingira na Usafirishaji
Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Digi Cheti
Bidhaa Zinazohusiana
RN2103ACT(TPL3)
TRANS PREBIAS PNP 50V 0.08A CST3
RN2111MFV,L3F
TRANS PREBIAS PNP 50V 0.1A VESM
RN2110ACT(TPL3)
TRANS PREBIAS PNP 50V 0.08A CST3
