Nambari ya Bidhaa ya Mtengenezaji:
HN3C51F-GR(TE85L,F
Product Overview
Mtengenezaji:
Toshiba Semiconductor and Storage
Nambari ya Kipande:
HN3C51F-GR(TE85L,F-DG
Maelezo:
TRANS 2NPN 120V 0.1A SM6
Maelezo ya Kina:
Bipolar (BJT) Transistor Array 2 NPN (Dual) 120V 100mA 100MHz 300mW Surface Mount SM6
Hesabu:
12889166
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
tgRp
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
HN3C51F-GR(TE85L,F Maalum ya Kiufundi
Kikundi
Bipolar (BJT), Vikundi vya Transistori za Bipolar
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
-
Mfululizo
-
Hali ya Bidhaa
Obsolete
Aina ya Transistor
2 NPN (Dual)
Sasa - Mkusanyaji (Ic) (Max)
100mA
Voltage - Uvunjaji wa Emitter ya Mkusanyaji (Max)
120V
Ujazaji wa Vce (Max) @ ib, ic
300mV @ 1mA, 10mA
Sasa - Kukatwa kwa Mkusanyaji (Max)
100nA (ICBO)
DC Gain ya Sasa (hFE) (Min) @ Ic, Vce
200 @ 2mA, 6V
Nguvu - Max
300mW
Mzunguko - Mpito
100MHz
Joto la Uendeshaji
150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
SC-74, SOT-457
Kifurushi cha Kifaa cha Muuzaji
SM6
Nambari ya Bidhaa ya Msingi
HN3C51
Taarifa za Ziada
Kifurushi cha Kawaida
3,000
Majina mengine
HN3C51FGR(TE85LFTR
HN3C51F-GR(TE85LF)CT-DG
HN3C51F-GR(TE85LF)TR-DG
HN3C51F-GR(TE85LFDKR
HN3C51F-GR(TE85LF)TR
HN3C51F-GR(TE85LFTR
HN3C51F-GR(TE85L,F)
HN3C51FGR(TE85LFTR-DG
HN3C51F-GRTE85LF
HN3C51F-GR(TE85LFCT
HN3C51F-GR(TE85LF)CT
HN3C51F-GR(TE85LF)DKR
HN3C51F-GR(TE85LF)DKR-DG
Uainishaji wa Mazingira na Usafirishaji
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Digi Cheti
Bidhaa Zinazohusiana
HN1C01FU-GR,LF
TRANS 2NPN 50V 0.15A US6
HN3A51F(TE85L,F)
TRANS 2PNP 120V 0.1A SM6
HN4A56JU(TE85L,F)
TRANS 2 PNP 50V 150MA 5TSSOP
