Nambari ya Bidhaa ya Mtengenezaji:
HN3A51F(TE85L,F)
Product Overview
Mtengenezaji:
Toshiba Semiconductor and Storage
Nambari ya Kipande:
HN3A51F(TE85L,F)-DG
Maelezo:
TRANS 2PNP 120V 0.1A SM6
Maelezo ya Kina:
Bipolar (BJT) Transistor Array 2 PNP (Dual) 120V 100mA 100MHz 300mW Surface Mount SM6
Hesabu:
12889344
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
vjS4
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
HN3A51F(TE85L,F) Maalum ya Kiufundi
Kikundi
Bipolar (BJT), Vikundi vya Transistori za Bipolar
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
-
Mfululizo
-
Hali ya Bidhaa
Obsolete
Aina ya Transistor
2 PNP (Dual)
Sasa - Mkusanyaji (Ic) (Max)
100mA
Voltage - Uvunjaji wa Emitter ya Mkusanyaji (Max)
120V
Ujazaji wa Vce (Max) @ ib, ic
300mV @ 1mA, 10mA
Sasa - Kukatwa kwa Mkusanyaji (Max)
100nA (ICBO)
DC Gain ya Sasa (hFE) (Min) @ Ic, Vce
200 @ 2mA, 6V
Nguvu - Max
300mW
Mzunguko - Mpito
100MHz
Joto la Uendeshaji
150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
SC-74, SOT-457
Kifurushi cha Kifaa cha Muuzaji
SM6
Nambari ya Bidhaa ya Msingi
HN3A51
Taarifa za Ziada
Kifurushi cha Kawaida
3,000
Majina mengine
HN3A51F(TE85LF)CT
HN3A51FTE85LF
HN3A51F(TE85LF)TR
HN3A51F (TE85L,F)
HN3A51F(TE85LF)DKR
Uainishaji wa Mazingira na Usafirishaji
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Mifano Mbadala
NAMBARI YA SEHEMU
2SA1587-GR,LF
MTENGENEZAJI
Toshiba Semiconductor and Storage
KIASI KILICHOPATIKANA
37024
Nambari ya Sehemu
2SA1587-GR,LF-DG
BEI YA KILA KITU
0.02
AINA YA KUBADILISHA
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