Nambari ya Bidhaa ya Mtengenezaji:
HN1C03F-B(TE85L,F)
Product Overview
Mtengenezaji:
Toshiba Semiconductor and Storage
Nambari ya Kipande:
HN1C03F-B(TE85L,F)-DG
Maelezo:
TRANS 2NPN 20V 0.3A SM6
Maelezo ya Kina:
Bipolar (BJT) Transistor Array 2 NPN (Dual) 20V 300mA 30MHz 300mW Surface Mount SM6
Hesabu:
12890747
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
HN1C03F-B(TE85L,F) Maalum ya Kiufundi
Kikundi
Bipolar (BJT), Vikundi vya Transistori za Bipolar
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
Tape & Reel (TR)
Mfululizo
-
Hali ya Bidhaa
Active
Aina ya Transistor
2 NPN (Dual)
Sasa - Mkusanyaji (Ic) (Max)
300mA
Voltage - Uvunjaji wa Emitter ya Mkusanyaji (Max)
20V
Ujazaji wa Vce (Max) @ ib, ic
100mV @ 3mA, 30mA
Sasa - Kukatwa kwa Mkusanyaji (Max)
100nA (ICBO)
DC Gain ya Sasa (hFE) (Min) @ Ic, Vce
350 @ 4mA, 2V
Nguvu - Max
300mW
Mzunguko - Mpito
30MHz
Joto la Uendeshaji
150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
SC-74, SOT-457
Kifurushi cha Kifaa cha Muuzaji
SM6
Nambari ya Bidhaa ya Msingi
HN1C03
Karatasi za Takwimu na Nyaraka
Karatasi za data
Taarifa za Ziada
Kifurushi cha Kawaida
3,000
Majina mengine
HN1C03F-B(TE85LF)TR
HN1C03F-B(TE85LF)CT
HN1C03F-B(TE85LF)DKR
HN1C03F-B (TE85L,F)
Uainishaji wa Mazingira na Usafirishaji
Hali ya RoHS
RoHS Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Mifano Mbadala
NAMBARI YA SEHEMU
IMX25T110
MTENGENEZAJI
Rohm Semiconductor
KIASI KILICHOPATIKANA
6202
Nambari ya Sehemu
IMX25T110-DG
BEI YA KILA KITU
0.09
AINA YA KUBADILISHA
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