SI2312BDS-T1-BE3

Nambari ya Bidhaa ya Mtengenezaji:

SI2312BDS-T1-BE3

Product Overview

Mtengenezaji:

Vishay Siliconix

Nambari ya Kipande:

SI2312BDS-T1-BE3-DG

Maelezo:

N-CHANNEL 20-V (D-S) MOSFET

Maelezo ya Kina:

N-Channel 20 V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Hesabu:

8986 Pcs Mpya Halisi Katika Hifadhi

12977847

Omba Nukuu

Kiasi
Kiasi cha chini 1

3XCw

(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24

TUMA

SI2312BDS-T1-BE3 Maalum ya Kiufundi

Kikundi

FETs, MOSFETs, FET moja, MOSFETs

Mtengenezaji

Vishay

Ufungashaji

Tape & Reel (TR)

Mfululizo

-

Hali ya Bidhaa

Active

Aina ya FET

N-Channel

Teknolojia

MOSFET (Metal Oxide)

Drain kwa Voltage ya Chanzo (Vdss)

20 V

Sasa - Drain inayoendelea (id) @ 25 ° C

3.9A (Ta)

Voltage ya Hifadhi (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds Kwenye (Max) @ Id, Vgs

31mOhm @ 5A, 4.5V

Vgs(th) (Max) @ Id

850mV @ 250µA

Malipo ya lango (Qg) (Max) @ Vgs

12 nC @ 4.5 V

Vgs (Max)

±8V

Kipengele cha FET

-

Usambazaji wa Nguvu (Max)

750mW (Ta)

Joto la Uendeshaji

-55°C ~ 150°C (TJ)

Aina ya Kuweka

Surface Mount

Kifurushi cha Kifaa cha Muuzaji

SOT-23-3 (TO-236)

Kifurushi / Kesi

TO-236-3, SC-59, SOT-23-3

Karatasi za Takwimu na Nyaraka

Karatasi za data

Taarifa za Ziada

Kifurushi cha Kawaida

3,000

Majina mengine

742-SI2312BDS-T1-BE3TR

742-SI2312BDS-T1-BE3DKR

742-SI2312BDS-T1-BE3CT

Uainishaji wa Mazingira na Usafirishaji

Hali ya RoHS

ROHS3 Compliant

Kiwango cha Usikivu wa Moisture (MSL)

1 (Unlimited)

Hali ya REACH

REACH Unaffected

ECCN

EAR99

HTSUS

8541.21.0095

Digi Cheti

certification_01

certification_02

certification_03

certification_04

certification_015

certification_08

esd

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