Nambari ya Bidhaa ya Mtengenezaji:
TPN4R303NL,L1Q
Product Overview
Mtengenezaji:
Toshiba Semiconductor and Storage
Nambari ya Kipande:
TPN4R303NL,L1Q-DG
Maelezo:
MOSFET N-CH 30V 40A 8TSON
Maelezo ya Kina:
N-Channel 30 V 40A (Tc) 700mW (Ta), 34W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
Hesabu:
4115 Pcs Mpya Halisi Katika Hifadhi
12890048
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
UzLJ
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
TPN4R303NL,L1Q Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
Tape & Reel (TR)
Mfululizo
U-MOSVIII-H
Hali ya Bidhaa
Active
Aina ya FET
N-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
30 V
Sasa - Drain inayoendelea (id) @ 25 ° C
40A (Tc)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
4.5V, 10V
Rds Kwenye (Max) @ Id, Vgs
4.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.3V @ 200µA
Malipo ya lango (Qg) (Max) @ Vgs
14.8 nC @ 10 V
Vgs (Max)
±20V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
1400 pF @ 15 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
700mW (Ta), 34W (Tc)
Joto la Uendeshaji
150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi cha Kifaa cha Muuzaji
8-TSON Advance (3.1x3.1)
Kifurushi / Kesi
8-PowerVDFN
Nambari ya Bidhaa ya Msingi
TPN4R303
Karatasi za Takwimu na Nyaraka
Karatasi za data
Taarifa za Ziada
Kifurushi cha Kawaida
5,000
Majina mengine
264-TPN4R303NL,L1QDKR
TPN4R303NL,L1Q(M
TPN4R303NLL1QCT
264-TPN4R303NL,L1QTR
TPN4R303NLL1QTR
TPN4R303NLL1QDKR
TPN4R303NLL1QTR-DG
264-TPN4R303NL,L1QCT
TPN4R303NLL1QDKR-DG
TPN4R303NLL1QCT-DG
Uainishaji wa Mazingira na Usafirishaji
Hali ya RoHS
RoHS Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
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