Nambari ya Bidhaa ya Mtengenezaji:
TK5R1P08QM,RQ
Product Overview
Mtengenezaji:
Toshiba Semiconductor and Storage
Nambari ya Kipande:
TK5R1P08QM,RQ-DG
Maelezo:
UMOS10 DPAK 80V 5.1MOHM
Maelezo ya Kina:
N-Channel 80 V 84A (Tc) 104W (Tc) Surface Mount DPAK
Hesabu:
15568 Pcs Mpya Halisi Katika Hifadhi
12967433
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
Eb6b
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
TK5R1P08QM,RQ Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
Tape & Reel (TR)
Mfululizo
U-MOSX-H
Hali ya Bidhaa
Active
Aina ya FET
N-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
80 V
Sasa - Drain inayoendelea (id) @ 25 ° C
84A (Tc)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
6V, 10V
Rds Kwenye (Max) @ Id, Vgs
5.1mOhm @ 42A, 10V
Vgs(th) (Max) @ Id
3.5V @ 700µA
Malipo ya lango (Qg) (Max) @ Vgs
56 nC @ 10 V
Vgs (Max)
±20V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
3980 pF @ 40 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
104W (Tc)
Joto la Uendeshaji
175°C
Aina ya Kuweka
Surface Mount
Kifurushi cha Kifaa cha Muuzaji
DPAK
Kifurushi / Kesi
TO-252-3, DPAK (2 Leads + Tab), SC-63
Karatasi za Takwimu na Nyaraka
Taarifa za Ziada
Kifurushi cha Kawaida
2,500
Majina mengine
264-TK5R1P08QM,RQDKR-DG
264-TK5R1P08QM,RQDKR
264-TK5R1P08QMRQDKR
264-TK5R1P08QM,RQTR
TK5R1P08QM,RQ(S2
264-TK5R1P08QM,RQCT-DG
264-TK5R1P08QM,RQCT
264-TK5R1P08QMRQTR
264-TK5R1P08QM,RQTR-DG
264-TK5R1P08QMRQCT
Uainishaji wa Mazingira na Usafirishaji
Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
Bidhaa Zinazohusiana
SIJH600E-T1-GE3
N-CHANNEL 60-V (D-S) 175C MOSFET
2SJ462-T1-AZ
P-CHANNEL POWER MOSFET
UF3SC065030D8S
SICFET N-CH 650V 18A 4DFN