Nambari ya Bidhaa ya Mtengenezaji:
TK58A06N1,S4X
Product Overview
Mtengenezaji:
Toshiba Semiconductor and Storage
Nambari ya Kipande:
TK58A06N1,S4X-DG
Maelezo:
MOSFET N-CH 60V 58A TO220SIS
Maelezo ya Kina:
N-Channel 60 V 58A (Tc) 35W (Tc) Through Hole TO-220SIS
Hesabu:
4 Pcs Mpya Halisi Katika Hifadhi
12890337
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
qGTK
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
TK58A06N1,S4X Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
Tube
Mfululizo
U-MOSVIII-H
Hali ya Bidhaa
Active
Aina ya FET
N-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
60 V
Sasa - Drain inayoendelea (id) @ 25 ° C
58A (Tc)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
10V
Rds Kwenye (Max) @ Id, Vgs
5.4mOhm @ 29A, 10V
Vgs(th) (Max) @ Id
4V @ 500µA
Malipo ya lango (Qg) (Max) @ Vgs
46 nC @ 10 V
Vgs (Max)
±20V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
3400 pF @ 30 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
35W (Tc)
Joto la Uendeshaji
150°C (TJ)
Aina ya Kuweka
Through Hole
Kifurushi cha Kifaa cha Muuzaji
TO-220SIS
Kifurushi / Kesi
TO-220-3 Full Pack
Nambari ya Bidhaa ya Msingi
TK58A06
Karatasi za Takwimu na Nyaraka
Karatasi za data
Taarifa za Ziada
Kifurushi cha Kawaida
50
Majina mengine
TK58A06N1S4X
TK58A06N1,S4X-DG
TK58A06N1,S4X(S
Uainishaji wa Mazingira na Usafirishaji
Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
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