Nambari ya Bidhaa ya Mtengenezaji:
TK100S04N1L,LXHQ
Product Overview
Mtengenezaji:
Toshiba Semiconductor and Storage
Nambari ya Kipande:
TK100S04N1L,LXHQ-DG
Maelezo:
MOSFET N-CH 40V 100A DPAK
Maelezo ya Kina:
N-Channel 40 V 100A (Ta) 180W (Tc) Surface Mount DPAK+
Hesabu:
721 Pcs Mpya Halisi Katika Hifadhi
12938217
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
LGSf
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
TK100S04N1L,LXHQ Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
Tape & Reel (TR)
Mfululizo
U-MOSVIII-H
Hali ya Bidhaa
Active
Aina ya FET
N-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
40 V
Sasa - Drain inayoendelea (id) @ 25 ° C
100A (Ta)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
4.5V, 10V
Rds Kwenye (Max) @ Id, Vgs
2.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.5V @ 500µA
Malipo ya lango (Qg) (Max) @ Vgs
76 nC @ 10 V
Vgs (Max)
±20V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
5490 pF @ 10 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
180W (Tc)
Joto la Uendeshaji
175°C
Aina ya Kuweka
Surface Mount
Kifurushi cha Kifaa cha Muuzaji
DPAK+
Kifurushi / Kesi
TO-252-3, DPAK (2 Leads + Tab), SC-63
Nambari ya Bidhaa ya Msingi
TK100S04
Karatasi za Takwimu na Nyaraka
Taarifa za Ziada
Kifurushi cha Kawaida
2,000
Majina mengine
TK100S04N1L,LXHQ(O
264-TK100S04N1LLXHQDKR
264-TK100S04N1LLXHQCT
264-TK100S04N1LLXHQTR
Uainishaji wa Mazingira na Usafirishaji
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
Bidhaa Zinazohusiana
NTMFS6H801NLT1G
MOSFET N-CH 80V 24A/160A 5DFN
XPN6R706NC,L1XHQ
MOSFET N-CH 60V 40A 8TSON
NTH4L020N120SC1
SICFET N-CH 1200V 102A TO247
