Nambari ya Bidhaa ya Mtengenezaji:
TJ50S06M3L(T6L1,NQ
Product Overview
Mtengenezaji:
Toshiba Semiconductor and Storage
Nambari ya Kipande:
TJ50S06M3L(T6L1,NQ-DG
Maelezo:
MOSFET P-CH 60V 50A DPAK
Maelezo ya Kina:
P-Channel 60 V 50A (Ta) 90W (Tc) Surface Mount DPAK+
Hesabu:
2000 Pcs Mpya Halisi Katika Hifadhi
12889173
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
TJ50S06M3L(T6L1,NQ Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
Tape & Reel (TR)
Mfululizo
U-MOSVI
Hali ya Bidhaa
Active
Aina ya FET
P-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
60 V
Sasa - Drain inayoendelea (id) @ 25 ° C
50A (Ta)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
6V, 10V
Rds Kwenye (Max) @ Id, Vgs
13.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Malipo ya lango (Qg) (Max) @ Vgs
124 nC @ 10 V
Vgs (Max)
+10V, -20V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
6290 pF @ 10 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
90W (Tc)
Joto la Uendeshaji
175°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi cha Kifaa cha Muuzaji
DPAK+
Kifurushi / Kesi
TO-252-3, DPAK (2 Leads + Tab), SC-63
Nambari ya Bidhaa ya Msingi
TJ50S06
Karatasi za Takwimu na Nyaraka
Karatasi za data
Taarifa za Ziada
Kifurushi cha Kawaida
2,000
Majina mengine
TJ50S06M3LT6L1NQ
264-TJ50S06M3L(T6L1NQTR
TJ50S06M3L(T6L1NQ
264-TJ50S06M3L(T6L1,NQCT
264-TJ50S06M3L(T6L1,NQDKR
264-TJ50S06M3L(T6L1,NQDKR-DG
264-TJ50S06M3L(T6L1,NQCT-DG
TJ50S06M3L(T6L1NQ-DG
264-TJ50S06M3L(T6L1NQDKR
264-TJ50S06M3L(T6L1NQCT
Uainishaji wa Mazingira na Usafirishaji
Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
Bidhaa Zinazohusiana
DMT6002LPS-13
MOSFET N-CH 60V 100A PWRDI5060-8
SSM3J66MFV,L3F
MOSFET P-CH 20V 800MA VESM
2SK3466(TE24L,Q)
MOSFET N-CH 500V 5A 4TFP
