Nambari ya Bidhaa ya Mtengenezaji:
SSM3J66MFV,L3XHF
Product Overview
Mtengenezaji:
Toshiba Semiconductor and Storage
Nambari ya Kipande:
SSM3J66MFV,L3XHF-DG
Maelezo:
AUTO AEC-Q SS MOS P-CH LOW VOLTA
Maelezo ya Kina:
P-Channel 20 V 800mA (Ta) 150mW (Ta) Surface Mount VESM
Hesabu:
14411 Pcs Mpya Halisi Katika Hifadhi
12996440
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
eVWe
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
SSM3J66MFV,L3XHF Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
Tape & Reel (TR)
Mfululizo
U-MOSVI
Hali ya Bidhaa
Active
Aina ya FET
P-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
20 V
Sasa - Drain inayoendelea (id) @ 25 ° C
800mA (Ta)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
1.2V, 4.5V
Rds Kwenye (Max) @ Id, Vgs
390mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA
Malipo ya lango (Qg) (Max) @ Vgs
1.6 nC @ 4.5 V
Vgs (Max)
+6V, -8V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
100 pF @ 10 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
150mW (Ta)
Joto la Uendeshaji
150°C
Aina ya Kuweka
Surface Mount
Kifurushi cha Kifaa cha Muuzaji
VESM
Kifurushi / Kesi
SOT-723
Karatasi za Takwimu na Nyaraka
Mchoro wa HTML
Karatasi za data
Jarida la Takwimu
Taarifa za Ziada
Kifurushi cha Kawaida
8,000
Majina mengine
264-SSM3J66MFV,L3XHFDKR
264-SSM3J66MFVL3XHFTR
264-SSM3J66MFVL3XHFDKR
264-SSM3J66MFV,L3XHFCT
264-SSM3J66MFV,L3XHFDKR-DG
264-SSM3J66MFV,L3XHFTR-DG
264-SSM3J66MFVL3XHFCT
264-SSM3J66MFV,L3XHFTR
264-SSM3J66MFV,L3XHFCT-DG
Uainishaji wa Mazingira na Usafirishaji
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
Hali ya REACH
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Digi Cheti
Bidhaa Zinazohusiana
SI2102A-TP
N-CHANNEL MOSFET
PSMN018-100ESFQ
NEXPERIA PSMN018 - NEXTPOWER 100
R8009KNXC7G
HIGH-SPEED SWITCHING NCH 800V 9A
