Nyumbani
Bidhaa
Wazalishaji
Kuhusu DiGi
Wasiliana Nasi
Blogu na Machapisho
OMB/Quote
Tanzania
Ingiza
Lugha Teule
Lugha ya kisasa unayichagua
Tanzania
K switch:
Kiingereza
Ulaya
Uingereza
Ufaransa
Uhispania
Uturuki
Moldova
Lithuania
Norwei
Ujerumani
Ureno
Slovakia
ltaly
Finili
Kirusi
Bulgaria
Denmarki
Estonia
Polandi
Ukreni
Slovenia
Kicheki
Kigiriki
Kroatia
Uyahudi
Serbia
Belarusi
Uholanzi
Swideni
Montenegro
Kibaski
Aisilandi
Bosnia
Kihangaria
Romania
Austria
Ubelgiji
Irelandi
Asia / Pasifiki
China
Vietnam
Indonesia
Thailandi
Laos
Kifilipino
Malaysia
Korea
Japani
HongKong
Taiwani
Singapori
Pakistan
Saudi Arabia
Khatari
Kuwaiti
Cambodia
Myanmar
Afrika, India na Mashariki ya Kati
Umoja wa Falme za Kiarabu
Tajikistan
Madagascar
India
Irani
DR Congo
Afrika Kusini
Misri
Kenya
Tanzania
Ghana
Senegal
Moroko
Tunisia
Amerika ya Kusini / Oceania
New Zealandi
Angola
Brazili
Msumbiji
Peru
Kolombia
Chile
Venezuela
Ekuado
Bolivia
Uruguay
Ajentina
Paraguay
Australia
Amerika ya Kaskazini
Marekani
Haiti
Kanada
Kosta Rica
Meksiko
Kuhusu DiGi
Kuhusu Sisi
Kuhusu Sisi
Vyeti Vyetu
DiGi Utangulizi
Kwanini DiGi
Sera
Sera ya Ubora
Masharti ya matumizi
Uzingatiaji wa RoHS
Mchakato wa Kurudi
Rasilimali
Mikakati ya Bidhaa
Wazalishaji
Blogu na Machapisho
Huduma
Dhamana ya Ubora
Njia ya Malipo
Kusafirishwa Duniani
Viwango vya Usafirishaji
Maswali ya Mara kwa Mara
Nambari ya Bidhaa ya Mtengenezaji:
SSM3J66MFV,L3XHF
Product Overview
Mtengenezaji:
Toshiba Semiconductor and Storage
Nambari ya Kipande:
SSM3J66MFV,L3XHF-DG
Maelezo:
AUTO AEC-Q SS MOS P-CH LOW VOLTA
Maelezo ya Kina:
P-Channel 20 V 800mA (Ta) 150mW (Ta) Surface Mount VESM
Hesabu:
14411 Pcs Mpya Halisi Katika Hifadhi
12996440
Omba Nukuu
Kiasi
Kiasi cha chini 1
*
Kampuni
*
Jina la Mawasiliano
*
Simu
*
Barua pepe
Anwani ya Uwasilishaji
Ujumbe
e
V
W
e
(
*
) ni lazima
Tutakurudishia jibu ndani ya masaa 24
TUMA
SSM3J66MFV,L3XHF Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
Tape & Reel (TR)
Mfululizo
U-MOSVI
Hali ya Bidhaa
Active
Aina ya FET
P-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
20 V
Sasa - Drain inayoendelea (id) @ 25 ° C
800mA (Ta)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
1.2V, 4.5V
Rds Kwenye (Max) @ Id, Vgs
390mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA
Malipo ya lango (Qg) (Max) @ Vgs
1.6 nC @ 4.5 V
Vgs (Max)
+6V, -8V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
100 pF @ 10 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
150mW (Ta)
Joto la Uendeshaji
150°C
Aina ya Kuweka
Surface Mount
Kifurushi cha Kifaa cha Muuzaji
VESM
Kifurushi / Kesi
SOT-723
Karatasi za Takwimu na Nyaraka
Mchoro wa HTML
SSM3J66MFV,L3XHF-DG
Karatasi za data
SSM3J66MFV Datasheet
Jarida la Takwimu
SSM3J66MFV,L3XHF
Taarifa za Ziada
Kifurushi cha Kawaida
8,000
Majina mengine
264-SSM3J66MFV,L3XHFDKR
264-SSM3J66MFVL3XHFTR
264-SSM3J66MFVL3XHFDKR
264-SSM3J66MFV,L3XHFCT
264-SSM3J66MFV,L3XHFDKR-DG
264-SSM3J66MFV,L3XHFTR-DG
264-SSM3J66MFVL3XHFCT
264-SSM3J66MFV,L3XHFTR
264-SSM3J66MFV,L3XHFCT-DG
Uainishaji wa Mazingira na Usafirishaji
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
Hali ya REACH
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Digi Cheti
Bidhaa Zinazohusiana
SI2102A-TP
N-CHANNEL MOSFET
PSMN018-100ESFQ
NEXPERIA PSMN018 - NEXTPOWER 100
R8009KNXC7G
HIGH-SPEED SWITCHING NCH 800V 9A
IPL65R1K5C6SE8211ATMA1
IPL65R1K5 - 650V AND 700V COOLMO