RN2902FE,LF(CT
Nambari ya Bidhaa ya Mtengenezaji:

RN2902FE,LF(CT

Product Overview

Mtengenezaji:

Toshiba Semiconductor and Storage

Nambari ya Kipande:

RN2902FE,LF(CT-DG

Maelezo:

TRANS 2PNP PREBIAS 0.2W ES6
Maelezo ya Kina:
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount ES6

Hesabu:

3990 Pcs Mpya Halisi Katika Hifadhi
12891791
Omba Nukuu
Kiasi
Kiasi cha chini 1
num_del num_add
*
*
*
*
F7Xg
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
TUMA

RN2902FE,LF(CT Maalum ya Kiufundi

Kikundi
Bipolar (BJT), Mifumo ya Transistor Bipolar, Iliyopangwa Kabla
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
Tape & Reel (TR)
Mfululizo
-
Hali ya Bidhaa
Active
Aina ya Transistor
2 PNP - Pre-Biased (Dual)
Sasa - Mkusanyaji (Ic) (Max)
100mA
Voltage - Uvunjaji wa Emitter ya Mkusanyaji (Max)
50V
Resistor - Msingi (R1)
10kOhms
Resistor - Msingi wa Emitter (R2)
10kOhms
DC Gain ya Sasa (hFE) (Min) @ Ic, Vce
50 @ 10mA, 5V
Ujazaji wa Vce (Max) @ ib, ic
300mV @ 250µA, 5mA
Sasa - Kukatwa kwa Mkusanyaji (Max)
500nA
Mzunguko - Mpito
200MHz
Nguvu - Max
200mW
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
SOT-563, SOT-666
Kifurushi cha Kifaa cha Muuzaji
ES6
Nambari ya Bidhaa ya Msingi
RN2902

Karatasi za Takwimu na Nyaraka

Karatasi za data
RN2901FE-06FE

Taarifa za Ziada

Kifurushi cha Kawaida
4,000
Majina mengine
RN2902FELF(CTTR
RN2902FELF(CTDKR
RN2902FE,LF(CB
RN2902FELF(CTCT

Uainishaji wa Mazingira na Usafirishaji

Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095

Mifano Mbadala

NAMBARI YA SEHEMU
NSVBA114EDXV6T1G
MTENGENEZAJI
onsemi
KIASI KILICHOPATIKANA
0
Nambari ya Sehemu
NSVBA114EDXV6T1G-DG
BEI YA KILA KITU
0.05
AINA YA KUBADILISHA
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NAMBARI YA SEHEMU
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KIASI KILICHOPATIKANA
4000
Nambari ya Sehemu
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BEI YA KILA KITU
0.05
AINA YA KUBADILISHA
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AINA YA KUBADILISHA
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Digi Cheti
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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