RN2901,LF(CT
Nambari ya Bidhaa ya Mtengenezaji:

RN2901,LF(CT

Product Overview

Mtengenezaji:

Toshiba Semiconductor and Storage

Nambari ya Kipande:

RN2901,LF(CT-DG

Maelezo:

PNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K
Maelezo ya Kina:
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6

Hesabu:

6 Pcs Mpya Halisi Katika Hifadhi
12890937
Omba Nukuu
Kiasi
Kiasi cha chini 1
num_del num_add
*
*
*
*
pnj0
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
TUMA

RN2901,LF(CT Maalum ya Kiufundi

Kikundi
Bipolar (BJT), Mifumo ya Transistor Bipolar, Iliyopangwa Kabla
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
Tape & Reel (TR)
Mfululizo
-
Hali ya Bidhaa
Active
Aina ya Transistor
2 PNP - Pre-Biased (Dual)
Sasa - Mkusanyaji (Ic) (Max)
100mA
Voltage - Uvunjaji wa Emitter ya Mkusanyaji (Max)
50V
Resistor - Msingi (R1)
4.7kOhms
Resistor - Msingi wa Emitter (R2)
4.7kOhms
DC Gain ya Sasa (hFE) (Min) @ Ic, Vce
30 @ 10mA, 5V
Ujazaji wa Vce (Max) @ ib, ic
300mV @ 250µA, 5mA
Sasa - Kukatwa kwa Mkusanyaji (Max)
500nA
Mzunguko - Mpito
200MHz
Nguvu - Max
200mW
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
6-TSSOP, SC-88, SOT-363
Kifurushi cha Kifaa cha Muuzaji
US6
Nambari ya Bidhaa ya Msingi
RN2901

Karatasi za Takwimu na Nyaraka

Karatasi za data
RN2901 - RN2906 Datasheet

Taarifa za Ziada

Kifurushi cha Kawaida
3,000
Majina mengine
RN2901LF(CTCT
RN2901LF(CTTR
RN2901LF(CTDKR
RN2901,LF(CB

Uainishaji wa Mazingira na Usafirishaji

Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
Hali ya REACH
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075

Mifano Mbadala

NAMBARI YA SEHEMU
PUMB15,115
MTENGENEZAJI
Nexperia USA Inc.
KIASI KILICHOPATIKANA
2890
Nambari ya Sehemu
PUMB15,115-DG
BEI YA KILA KITU
0.02
AINA YA KUBADILISHA
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