RN2308(TE85L,F)
Nambari ya Bidhaa ya Mtengenezaji:

RN2308(TE85L,F)

Product Overview

Mtengenezaji:

Toshiba Semiconductor and Storage

Nambari ya Kipande:

RN2308(TE85L,F)-DG

Maelezo:

TRANS PREBIAS PNP 50V 0.1A SC70
Maelezo ya Kina:
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SC-70

Hesabu:

2841 Pcs Mpya Halisi Katika Hifadhi
12889568
Omba Nukuu
Kiasi
Kiasi cha chini 1
num_del num_add
*
*
*
*
Ykk0
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
TUMA

RN2308(TE85L,F) Maalum ya Kiufundi

Kikundi
Bipolar (BJT), Mabipolar Transistors ya Pre-Biased ya Kimoja
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
Cut Tape (CT)
Mfululizo
-
Hali ya Bidhaa
Active
Aina ya Transistor
PNP - Pre-Biased
Sasa - Mkusanyaji (Ic) (Max)
100 mA
Voltage - Uvunjaji wa Emitter ya Mkusanyaji (Max)
50 V
Resistor - Msingi (R1)
22 kOhms
Resistor - Msingi wa Emitter (R2)
47 kOhms
DC Gain ya Sasa (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Ujazaji wa Vce (Max) @ ib, ic
300mV @ 250µA, 5mA
Sasa - Kukatwa kwa Mkusanyaji (Max)
500nA
Mzunguko - Mpito
200 MHz
Nguvu - Max
100 mW
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
SC-70, SOT-323
Kifurushi cha Kifaa cha Muuzaji
SC-70
Nambari ya Bidhaa ya Msingi
RN2308

Karatasi za Takwimu na Nyaraka

Karatasi za data
RN2307 to RN2309

Taarifa za Ziada

Kifurushi cha Kawaida
3,000
Majina mengine
RN2308(TE85LF)
RN2308(TE85L,F)-DG
RN2308(TE85LF)-DG
RN2308(TE85LF)TR
RN2308(TE85LF)DKR
RN2308(TE85LF)CT

Uainishaji wa Mazingira na Usafirishaji

Hali ya RoHS
RoHS Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075

Mifano Mbadala

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Upgrade
Digi Cheti
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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