Nyumbani
Bidhaa
Wazalishaji
Kuhusu DiGi
Wasiliana Nasi
Blogu na Machapisho
OMB/Quote
Tanzania
Ingiza
Lugha Teule
Lugha ya kisasa unayichagua
Tanzania
K switch:
Kiingereza
Europe
United Kingdom
France
Spain
Turkey
Moldova
Lithuania
Norway
Germany
Portugal
Slovakia
ltaly
Finland
Russian
Bulgaria
Denmark
Estonia
Poland
Ukraine
Slovenia
Czech
Greek
Croatia
Israel
Serbia
Belarus
Netherlands
Sweden
Montenegro
Basque
Iceland
Bosnia
Hungarian
Romania
Austria
Belgium
Ireland
Asia / Pacific
China
Vietnam
Indonesia
Thailand
Laos
Filipino
Malaysia
Korea
Japan
HongKong
TaiWan
Singapore
Pakistan
Saudi Arabia
Qatar
Kuwait
Cambodia
Myanmar
Africa,India and Middle East
United Arab Emirates
Tajikistan
Madagascar
India
Iran
DR Congo
South Africa
Egypt
Kenya
Tanzania
Ghana
Senegal
Morocco
Tunisia
South America / Oceania
New Zealand
Angola
Brazil
Mozambique
Peru
Colombia
Chile
Venezuela
Ecuador
Bolivia
Uruguay
Argentina
Paraguay
Australia
North America
United States
Haiti
Canada
Costa Rica
Mexico
Kuhusu DiGi
Kuhusu Sisi
Kuhusu Sisi
Vyeti Vyetu
DiGi Utangulizi
Kwanini DiGi
Sera
Sera ya Ubora
Masharti ya matumizi
Uzingatiaji wa RoHS
Mchakato wa Kurudi
Rasilimali
Mikakati ya Bidhaa
Wazalishaji
Blogu na Machapisho
Huduma
Dhamana ya Ubora
Njia ya Malipo
Kusafirishwa Duniani
Viwango vya Usafirishaji
Maswali ya Mara kwa Mara
Nambari ya Bidhaa ya Mtengenezaji:
RN2305(TE85L,F)
Product Overview
Mtengenezaji:
Toshiba Semiconductor and Storage
Nambari ya Kipande:
RN2305(TE85L,F)-DG
Maelezo:
TRANS PREBIAS PNP 50V 0.1A USM
Maelezo ya Kina:
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SC-70
Hesabu:
107 Pcs Mpya Halisi Katika Hifadhi
12889862
Omba Nukuu
Kiasi
Kiasi cha chini 1
*
Kampuni
*
Jina la Mawasiliano
*
Simu
*
Barua pepe
Anwani ya Uwasilishaji
Ujumbe
b
2
B
1
(
*
) ni lazima
Tutakurudishia jibu ndani ya masaa 24
TUMA
RN2305(TE85L,F) Maalum ya Kiufundi
Kikundi
Bipolar (BJT), Mabipolar Transistors ya Pre-Biased ya Kimoja
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
Cut Tape (CT)
Mfululizo
-
Hali ya Bidhaa
Active
Aina ya Transistor
PNP - Pre-Biased
Sasa - Mkusanyaji (Ic) (Max)
100 mA
Voltage - Uvunjaji wa Emitter ya Mkusanyaji (Max)
50 V
Resistor - Msingi (R1)
2.2 kOhms
Resistor - Msingi wa Emitter (R2)
47 kOhms
DC Gain ya Sasa (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Ujazaji wa Vce (Max) @ ib, ic
300mV @ 250µA, 5mA
Sasa - Kukatwa kwa Mkusanyaji (Max)
500nA
Mzunguko - Mpito
200 MHz
Nguvu - Max
100 mW
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
SC-70, SOT-323
Kifurushi cha Kifaa cha Muuzaji
SC-70
Nambari ya Bidhaa ya Msingi
RN2305
Karatasi za Takwimu na Nyaraka
Karatasi za data
RN2301 to RN2306
Taarifa za Ziada
Kifurushi cha Kawaida
3,000
Majina mengine
RN2305(TE85LF)
RN2305(TE85LF)-DG
RN2305(TE85LF)TR
RN2305TE85LF
RN2305(TE85LF)DKR
RN2305(TE85LF)CT
Uainishaji wa Mazingira na Usafirishaji
Hali ya RoHS
RoHS Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Mifano Mbadala
NAMBARI YA SEHEMU
DDTA123TUA-7-F
MTENGENEZAJI
Diodes Incorporated
KIASI KILICHOPATIKANA
0
Nambari ya Sehemu
DDTA123TUA-7-F-DG
BEI YA KILA KITU
0.02
AINA YA KUBADILISHA
Direct
NAMBARI YA SEHEMU
PDTA123YU,115
MTENGENEZAJI
Nexperia USA Inc.
KIASI KILICHOPATIKANA
2940
Nambari ya Sehemu
PDTA123YU,115-DG
BEI YA KILA KITU
0.01
AINA YA KUBADILISHA
Similar
NAMBARI YA SEHEMU
DTA123JUAT106
MTENGENEZAJI
Rohm Semiconductor
KIASI KILICHOPATIKANA
12
Nambari ya Sehemu
DTA123JUAT106-DG
BEI YA KILA KITU
0.19
AINA YA KUBADILISHA
Similar
NAMBARI YA SEHEMU
DDTA123JUA-7-F
MTENGENEZAJI
Diodes Incorporated
KIASI KILICHOPATIKANA
0
Nambari ya Sehemu
DDTA123JUA-7-F-DG
BEI YA KILA KITU
0.02
AINA YA KUBADILISHA
Similar
NAMBARI YA SEHEMU
DTA123JUA-TP
MTENGENEZAJI
Micro Commercial Co
KIASI KILICHOPATIKANA
2998
Nambari ya Sehemu
DTA123JUA-TP-DG
BEI YA KILA KITU
0.02
AINA YA KUBADILISHA
Similar
Digi Cheti
Bidhaa Zinazohusiana
RN1103MFV(TPL3)
TRANS PREBIAS NPN 50V 0.1A VESM
RN2114(TE85L,F)
TRANS PREBIAS PNP 50V 0.1A SSM
DDTA114EUA-7
TRANS PREBIAS PNP 50V SOT323
RN2110,LF(CT
TRANS PREBIAS PNP 50V 0.1A SSM