RN1963FE(TE85L,F)
Nambari ya Bidhaa ya Mtengenezaji:

RN1963FE(TE85L,F)

Product Overview

Mtengenezaji:

Toshiba Semiconductor and Storage

Nambari ya Kipande:

RN1963FE(TE85L,F)-DG

Maelezo:

TRANS 2NPN PREBIAS 0.1W ES6
Maelezo ya Kina:
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6

Hesabu:

915 Pcs Mpya Halisi Katika Hifadhi
12891446
Omba Nukuu
Kiasi
Kiasi cha chini 1
num_del num_add
*
*
*
*
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
TUMA

RN1963FE(TE85L,F) Maalum ya Kiufundi

Kikundi
Bipolar (BJT), Mifumo ya Transistor Bipolar, Iliyopangwa Kabla
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
Cut Tape (CT) & Digi-Reel®
Mfululizo
-
Hali ya Bidhaa
Obsolete
Aina ya Transistor
2 NPN - Pre-Biased (Dual)
Sasa - Mkusanyaji (Ic) (Max)
100mA
Voltage - Uvunjaji wa Emitter ya Mkusanyaji (Max)
50V
Resistor - Msingi (R1)
22kOhms
Resistor - Msingi wa Emitter (R2)
22kOhms
DC Gain ya Sasa (hFE) (Min) @ Ic, Vce
70 @ 10mA, 5V
Ujazaji wa Vce (Max) @ ib, ic
300mV @ 250µA, 5mA
Sasa - Kukatwa kwa Mkusanyaji (Max)
100nA (ICBO)
Mzunguko - Mpito
250MHz
Nguvu - Max
100mW
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
SOT-563, SOT-666
Kifurushi cha Kifaa cha Muuzaji
ES6
Nambari ya Bidhaa ya Msingi
RN1963

Taarifa za Ziada

Kifurushi cha Kawaida
4,000
Majina mengine
RN1963FE(TE85LF)DKR
RN1963FE(TE85LF)CT
RN1963FETE85LF
RN1963FE(TE85LF)TR

Uainishaji wa Mazingira na Usafirishaji

Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095

Mifano Mbadala

NAMBARI YA SEHEMU
RN1103MFV,L3F
MTENGENEZAJI
Toshiba Semiconductor and Storage
KIASI KILICHOPATIKANA
254
Nambari ya Sehemu
RN1103MFV,L3F-DG
BEI YA KILA KITU
0.06
AINA YA KUBADILISHA
Similar
NAMBARI YA SEHEMU
RN1103MFV(TPL3)
MTENGENEZAJI
Toshiba Semiconductor and Storage
KIASI KILICHOPATIKANA
0
Nambari ya Sehemu
RN1103MFV(TPL3)-DG
BEI YA KILA KITU
0.03
AINA YA KUBADILISHA
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