Nambari ya Bidhaa ya Mtengenezaji:
RN1118(T5L,F,T)
Product Overview
Mtengenezaji:
Toshiba Semiconductor and Storage
Nambari ya Kipande:
RN1118(T5L,F,T)-DG
Maelezo:
TRANS PREBIAS NPN 50V 0.1A SSM
Maelezo ya Kina:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW Surface Mount SSM
Hesabu:
12890882
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
Ekkx
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
RN1118(T5L,F,T) Maalum ya Kiufundi
Kikundi
Bipolar (BJT), Mabipolar Transistors ya Pre-Biased ya Kimoja
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
-
Mfululizo
-
Hali ya Bidhaa
Obsolete
Aina ya Transistor
NPN - Pre-Biased
Sasa - Mkusanyaji (Ic) (Max)
100 mA
Voltage - Uvunjaji wa Emitter ya Mkusanyaji (Max)
50 V
Resistor - Msingi (R1)
47 kOhms
Resistor - Msingi wa Emitter (R2)
10 kOhms
DC Gain ya Sasa (hFE) (Min) @ Ic, Vce
50 @ 10mA, 5V
Ujazaji wa Vce (Max) @ ib, ic
300mV @ 250µA, 5mA
Sasa - Kukatwa kwa Mkusanyaji (Max)
500nA
Mzunguko - Mpito
250 MHz
Nguvu - Max
100 mW
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
SC-75, SOT-416
Kifurushi cha Kifaa cha Muuzaji
SSM
Nambari ya Bidhaa ya Msingi
RN1118
Karatasi za Takwimu na Nyaraka
Karatasi za data
Taarifa za Ziada
Kifurushi cha Kawaida
3,000
Majina mengine
RN1118(T5LFT)CT
RN1118(T5LFT)TR
RN1118T5LFT
RN1118(T5LFT)DKR
Uainishaji wa Mazingira na Usafirishaji
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Mifano Mbadala
NAMBARI YA SEHEMU
PDTC144VM,315
MTENGENEZAJI
Nexperia USA Inc.
KIASI KILICHOPATIKANA
0
Nambari ya Sehemu
PDTC144VM,315-DG
BEI YA KILA KITU
0.02
AINA YA KUBADILISHA
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