Nambari ya Bidhaa ya Mtengenezaji:
2SJ610(TE16L1,NQ)
Product Overview
Mtengenezaji:
Toshiba Semiconductor and Storage
Nambari ya Kipande:
2SJ610(TE16L1,NQ)-DG
Maelezo:
MOSFET P-CH 250V 2A PW-MOLD
Maelezo ya Kina:
P-Channel 250 V 2A (Ta) 20W (Ta) Surface Mount PW-MOLD
Hesabu:
12890656
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
Z8Tz
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
2SJ610(TE16L1,NQ) Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
-
Mfululizo
-
Hali ya Bidhaa
Obsolete
Aina ya FET
P-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
250 V
Sasa - Drain inayoendelea (id) @ 25 ° C
2A (Ta)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
10V
Rds Kwenye (Max) @ Id, Vgs
2.55Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1mA
Malipo ya lango (Qg) (Max) @ Vgs
24 nC @ 10 V
Vgs (Max)
±20V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
381 pF @ 10 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
20W (Ta)
Joto la Uendeshaji
150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi cha Kifaa cha Muuzaji
PW-MOLD
Kifurushi / Kesi
TO-252-3, DPAK (2 Leads + Tab), SC-63
Nambari ya Bidhaa ya Msingi
2SJ610
Taarifa za Ziada
Kifurushi cha Kawaida
2,000
Uainishaji wa Mazingira na Usafirishaji
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
Bidhaa Zinazohusiana
TPN2010FNH,L1Q
MOSFET N-CH 250V 5.6A 8TSON
TK10Q60W,S1VQ
MOSFET N-CH 600V 9.7A IPAK
TK8Q60W,S1VQ
MOSFET N-CH 600V 8A IPAK
