Nambari ya Bidhaa ya Mtengenezaji:
2SA1869-Y(Q,M)
Product Overview
Mtengenezaji:
Toshiba Semiconductor and Storage
Nambari ya Kipande:
2SA1869-Y(Q,M)-DG
Maelezo:
TRANS PNP 50V 3A TO220NIS
Maelezo ya Kina:
Bipolar (BJT) Transistor PNP 50 V 3 A 100MHz 10 W Through Hole TO-220NIS
Hesabu:
12889794
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
2SA1869-Y(Q,M) Maalum ya Kiufundi
Kikundi
Bipolar (BJT), Mizani ya Bipolar ya Kizmoja
Mtengenezaji
Toshiba Electronic Devices and Storage Corporation
Ufungashaji
-
Mfululizo
-
Hali ya Bidhaa
Obsolete
Aina ya Transistor
PNP
Sasa - Mkusanyaji (Ic) (Max)
3 A
Voltage - Uvunjaji wa Emitter ya Mkusanyaji (Max)
50 V
Ujazaji wa Vce (Max) @ ib, ic
600mV @ 200mA, 2A
Sasa - Kukatwa kwa Mkusanyaji (Max)
1µA (ICBO)
DC Gain ya Sasa (hFE) (Min) @ Ic, Vce
70 @ 500mA, 2V
Nguvu - Max
10 W
Mzunguko - Mpito
100MHz
Joto la Uendeshaji
150°C (TJ)
Aina ya Kuweka
Through Hole
Kifurushi / Kesi
TO-220-3 Full Pack
Kifurushi cha Kifaa cha Muuzaji
TO-220NIS
Nambari ya Bidhaa ya Msingi
2SA1869
Taarifa za Ziada
Kifurushi cha Kawaida
1
Majina mengine
2SA1869YQM
2SA1869-Y(QM)
Uainishaji wa Mazingira na Usafirishaji
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0075
Mifano Mbadala
NAMBARI YA SEHEMU
2SA2097(TE16L1,NQ)
MTENGENEZAJI
Toshiba Semiconductor and Storage
KIASI KILICHOPATIKANA
72
Nambari ya Sehemu
2SA2097(TE16L1,NQ)-DG
BEI YA KILA KITU
0.25
AINA YA KUBADILISHA
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