CIGW252010GL3R3MNE
Nambari ya Bidhaa ya Mtengenezaji:

CIGW252010GL3R3MNE

Product Overview

Mtengenezaji:

Samsung Electro-Mechanics

Nambari ya Kipande:

CIGW252010GL3R3MNE-DG

Maelezo:

FIXED IND 3.3UH 1.8A 112MOHM SMD
Maelezo ya Kina:
3.3 µH Shielded Drum Core, Wirewound Inductor 1.8 A 112mOhm Max 1008 (2520 Metric)

Hesabu:

Ombi la Quotations Mtandaoni
363870
Omba Nukuu
Kiasi
Kiasi cha chini 1
num_del num_add
*
*
*
*
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
TUMA

CIGW252010GL3R3MNE Maalum ya Kiufundi

Kikundi
Indukta, Koyili, Chokes, Vikondaktari vya Kuanza
Mtengenezaji
Samsung Electro-Mechanics
Ufungashaji
-
Mfululizo
CIGW
Hali ya Bidhaa
Active
Aina
Drum Core, Wirewound
Vifaa - Msingi
Metal Composite
Inductance
3.3 µH
Uvumilivu
±20%
Ukadiriaji wa sasa (amps)
1.8 A
Sasa - Kueneza (Isat)
2.1A
Shielding
Shielded
Upinzani wa DC (DCR)
112mOhm Max
Q @ Freq
-
Frequency - Kujitegemea
-
Makadirio
-
Joto la Uendeshaji
-40°C ~ 125°C
Mzunguko wa Inductance - Mtihani
1 MHz
Vipengele
-
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
1008 (2520 Metric)
Kifurushi cha Kifaa cha Muuzaji
1008 (2520 Metric)
Ukubwa / Vipimo
0.098" L x 0.079" W (2.50mm x 2.00mm)
Height - Wake Up (Max)
0.039" (1.00mm)

Taarifa za Ziada

Kifurushi cha Kawaida
3,000
Majina mengine
1276-6934-6
1276-6934-2
1276-6934-1

Uainishaji wa Mazingira na Usafirishaji

Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
Hali ya REACH
REACH Unaffected
ECCN
EAR99
HTSUS
8504.50.8000
Digi Cheti
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
Bidhaa Zinazohusiana
sumida

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