SCT3160KLGC11

Nambari ya Bidhaa ya Mtengenezaji:

SCT3160KLGC11

Product Overview

Mtengenezaji:

Rohm Semiconductor

Nambari ya Kipande:

SCT3160KLGC11-DG

Maelezo:

SICFET N-CH 1200V 17A TO247N

Maelezo ya Kina:

N-Channel 1200 V 17A (Tc) 103W (Tc) Through Hole TO-247N

Hesabu:

2223 Pcs Mpya Halisi Katika Hifadhi

13527019

Omba Nukuu

Kiasi
Kiasi cha chini 1

7b3b

(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24

TUMA

SCT3160KLGC11 Maalum ya Kiufundi

Kikundi

FETs, MOSFETs, FET moja, MOSFETs

Mtengenezaji

ROHM Semiconductor

Ufungashaji

Tube

Mfululizo

-

Hali ya Bidhaa

Active

Aina ya FET

N-Channel

Teknolojia

SiCFET (Silicon Carbide)

Drain kwa Voltage ya Chanzo (Vdss)

1200 V

Sasa - Drain inayoendelea (id) @ 25 ° C

17A (Tc)

Voltage ya Hifadhi (Max Rds On, Min Rds On)

18V

Rds Kwenye (Max) @ Id, Vgs

208mOhm @ 5A, 18V

Vgs(th) (Max) @ Id

5.6V @ 2.5mA

Malipo ya lango (Qg) (Max) @ Vgs

42 nC @ 18 V

Vgs (Max)

+22V, -4V

Uwezo wa kuingiza (Ciss) (Max) @ Vds

398 pF @ 800 V

Kipengele cha FET

-

Usambazaji wa Nguvu (Max)

103W (Tc)

Joto la Uendeshaji

175°C (TJ)

Aina ya Kuweka

Through Hole

Kifurushi cha Kifaa cha Muuzaji

TO-247N

Kifurushi / Kesi

TO-247-3

Nambari ya Bidhaa ya Msingi

SCT3160

Karatasi za Takwimu na Nyaraka

Nyaraka za Kuaminika

MOS-3GTHD Reliability Test

Rasilimali za Ubunifu

TO-247N Inner Structure

Karatasi za data

SCT3160KLGC11 TO-247N Taping Spec

Taarifa za Ziada

Kifurushi cha Kawaida

30

Uainishaji wa Mazingira na Usafirishaji

Hali ya RoHS

ROHS3 Compliant

Kiwango cha Usikivu wa Moisture (MSL)

1 (Unlimited)

Hali ya REACH

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

Digi Cheti

certification_01

certification_02

certification_03

certification_04

certification_015

certification_08

esd

Bidhaa Zinazohusiana

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