FQU1N80TU

Nambari ya Bidhaa ya Mtengenezaji:

FQU1N80TU

Product Overview

Mtengenezaji:

onsemi

Nambari ya Kipande:

FQU1N80TU-DG

Maelezo:

MOSFET N-CH 800V 1A IPAK

Maelezo ya Kina:

N-Channel 800 V 1A (Tc) 2.5W (Ta), 45W (Tc) Through Hole IPAK

Hesabu:

Ombi la Quotations Mtandaoni

12837942

Omba Nukuu

Kiasi
Kiasi cha chini 1

aohR

(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24

TUMA

FQU1N80TU Maalum ya Kiufundi

Kikundi

FETs, MOSFETs, FET moja, MOSFETs

Mtengenezaji

onsemi

Ufungashaji

-

Mfululizo

QFET®

Hali ya Bidhaa

Obsolete

Aina ya FET

N-Channel

Teknolojia

MOSFET (Metal Oxide)

Drain kwa Voltage ya Chanzo (Vdss)

800 V

Sasa - Drain inayoendelea (id) @ 25 ° C

1A (Tc)

Voltage ya Hifadhi (Max Rds On, Min Rds On)

10V

Rds Kwenye (Max) @ Id, Vgs

20Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Malipo ya lango (Qg) (Max) @ Vgs

7.2 nC @ 10 V

Vgs (Max)

±30V

Uwezo wa kuingiza (Ciss) (Max) @ Vds

195 pF @ 25 V

Kipengele cha FET

-

Usambazaji wa Nguvu (Max)

2.5W (Ta), 45W (Tc)

Joto la Uendeshaji

-55°C ~ 150°C (TJ)

Aina ya Kuweka

Through Hole

Kifurushi cha Kifaa cha Muuzaji

IPAK

Kifurushi / Kesi

TO-251-3 Short Leads, IPak, TO-251AA

Nambari ya Bidhaa ya Msingi

FQU1N80

Karatasi za Takwimu na Nyaraka

Mchoro wa HTML

Karatasi za data

FQD1N80, FQU1N80

Jarida la Takwimu

Taarifa za Ziada

Kifurushi cha Kawaida

70

Uainishaji wa Mazingira na Usafirishaji

Hali ya RoHS

ROHS3 Compliant

Kiwango cha Usikivu wa Moisture (MSL)

Not Applicable

Hali ya REACH

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

Digi Cheti

certification_01

certification_02

certification_03

certification_04

certification_015

certification_08

esd

Bidhaa Zinazohusiana

onsemi

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MOSFET N-CH 800V 1.5A TO220F

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