FQP9N25C

Nambari ya Bidhaa ya Mtengenezaji:

FQP9N25C

Product Overview

Mtengenezaji:

onsemi

Nambari ya Kipande:

FQP9N25C-DG

Maelezo:

MOSFET N-CH 250V 8.8A TO220-3

Maelezo ya Kina:

N-Channel 250 V 8.8A (Tc) 74W (Tc) Through Hole TO-220-3

Hesabu:

Ombi la Quotations Mtandaoni

12850693

Omba Nukuu

Kiasi
Kiasi cha chini 1

3Oiu

(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24

TUMA

FQP9N25C Maalum ya Kiufundi

Kikundi

FETs, MOSFETs, FET moja, MOSFETs

Mtengenezaji

onsemi

Ufungashaji

-

Mfululizo

QFET®

Hali ya Bidhaa

Obsolete

Aina ya FET

N-Channel

Teknolojia

MOSFET (Metal Oxide)

Drain kwa Voltage ya Chanzo (Vdss)

250 V

Sasa - Drain inayoendelea (id) @ 25 ° C

8.8A (Tc)

Voltage ya Hifadhi (Max Rds On, Min Rds On)

10V

Rds Kwenye (Max) @ Id, Vgs

430mOhm @ 4.4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Malipo ya lango (Qg) (Max) @ Vgs

35 nC @ 10 V

Vgs (Max)

±30V

Uwezo wa kuingiza (Ciss) (Max) @ Vds

710 pF @ 25 V

Kipengele cha FET

-

Usambazaji wa Nguvu (Max)

74W (Tc)

Joto la Uendeshaji

-55°C ~ 150°C (TJ)

Aina ya Kuweka

Through Hole

Kifurushi cha Kifaa cha Muuzaji

TO-220-3

Kifurushi / Kesi

TO-220-3

Nambari ya Bidhaa ya Msingi

FQP9

Karatasi za Takwimu na Nyaraka

Mchoro wa HTML

Jarida la Takwimu

Taarifa za Ziada

Kifurushi cha Kawaida

1,000

Uainishaji wa Mazingira na Usafirishaji

Kiwango cha Usikivu wa Moisture (MSL)

1 (Unlimited)

Hali ya REACH

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

Mifano Mbadala

NAMBARI YA SEHEMU

RCX100N25

MTENGENEZAJI

Rohm Semiconductor

KIASI KILICHOPATIKANA

429

Nambari ya Sehemu

RCX100N25-DG

BEI YA KILA KITU

0.86

AINA YA KUBADILISHA

Direct

Digi Cheti

certification_01

certification_02

certification_03

certification_04

certification_015

certification_08

esd

Bidhaa Zinazohusiana

onsemi

FDB8874

MOSFET N-CH 30V 21A/121A TO263AB

alpha-and-omega-semiconductor

AOT284L

MOSFET N-CH 80V 16A/105A TO220

onsemi

FQP17N08

MOSFET N-CH 80V 16.5A TO220-3

onsemi

HUFA75332S3S

MOSFET N-CH 55V 60A D2PAK