FDP2D9N12C

Nambari ya Bidhaa ya Mtengenezaji:

FDP2D9N12C

Product Overview

Mtengenezaji:

onsemi

Nambari ya Kipande:

FDP2D9N12C-DG

Maelezo:

PTNG 120V N-FET TO220

Maelezo ya Kina:

N-Channel 120 V 18A (Ta), 210A (Tc) 2.4W (Ta), 333W (Tc) Through Hole TO-220

Hesabu:

Ombi la Quotations Mtandaoni

12839564

Omba Nukuu

Kiasi
Kiasi cha chini 1

wYyH

(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24

TUMA

FDP2D9N12C Maalum ya Kiufundi

Kikundi

FETs, MOSFETs, FET moja, MOSFETs

Mtengenezaji

onsemi

Ufungashaji

-

Mfululizo

PowerTrench®

Hali ya Bidhaa

Obsolete

Aina ya FET

N-Channel

Teknolojia

MOSFET (Metal Oxide)

Drain kwa Voltage ya Chanzo (Vdss)

120 V

Sasa - Drain inayoendelea (id) @ 25 ° C

18A (Ta), 210A (Tc)

Voltage ya Hifadhi (Max Rds On, Min Rds On)

6V, 10V

Rds Kwenye (Max) @ Id, Vgs

2.9mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

4V @ 686µA

Malipo ya lango (Qg) (Max) @ Vgs

109 nC @ 10 V

Vgs (Max)

±20V

Uwezo wa kuingiza (Ciss) (Max) @ Vds

8894 pF @ 60 V

Kipengele cha FET

-

Usambazaji wa Nguvu (Max)

2.4W (Ta), 333W (Tc)

Joto la Uendeshaji

-55°C ~ 175°C (TJ)

Aina ya Kuweka

Through Hole

Kifurushi cha Kifaa cha Muuzaji

TO-220

Kifurushi / Kesi

TO-220-3

Nambari ya Bidhaa ya Msingi

FDP2

Karatasi za Takwimu na Nyaraka

Mchoro wa HTML

Karatasi za data

Jarida la Takwimu

Taarifa za Ziada

Kifurushi cha Kawaida

800

Uainishaji wa Mazingira na Usafirishaji

Hali ya RoHS

ROHS3 Compliant

Kiwango cha Usikivu wa Moisture (MSL)

Not Applicable

Hali ya REACH

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

Digi Cheti

certification_01

certification_02

certification_03

certification_04

certification_015

certification_08

esd

Bidhaa Zinazohusiana

onsemi

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