FDB8860

Nambari ya Bidhaa ya Mtengenezaji:

FDB8860

Product Overview

Mtengenezaji:

onsemi

Nambari ya Kipande:

FDB8860-DG

Maelezo:

MOSFET N-CH 30V 80A TO263AB

Maelezo ya Kina:

N-Channel 30 V 80A (Tc) 254W (Tc) Surface Mount TO-263 (D2PAK)

Hesabu:

1 Pcs Mpya Halisi Katika Hifadhi

12847985

Omba Nukuu

Kiasi
Kiasi cha chini 1

iTfF

(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24

TUMA

FDB8860 Maalum ya Kiufundi

Kikundi

FETs, MOSFETs, FET moja, MOSFETs

Mtengenezaji

onsemi

Ufungashaji

Cut Tape (CT)

Mfululizo

PowerTrench®

Hali ya Bidhaa

Obsolete

Aina ya FET

N-Channel

Teknolojia

MOSFET (Metal Oxide)

Drain kwa Voltage ya Chanzo (Vdss)

30 V

Sasa - Drain inayoendelea (id) @ 25 ° C

80A (Tc)

Voltage ya Hifadhi (Max Rds On, Min Rds On)

4.5V, 10V

Rds Kwenye (Max) @ Id, Vgs

2.3mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Malipo ya lango (Qg) (Max) @ Vgs

214 nC @ 10 V

Vgs (Max)

±20V

Uwezo wa kuingiza (Ciss) (Max) @ Vds

12585 pF @ 15 V

Kipengele cha FET

-

Usambazaji wa Nguvu (Max)

254W (Tc)

Joto la Uendeshaji

-55°C ~ 175°C (TJ)

Aina ya Kuweka

Surface Mount

Kifurushi cha Kifaa cha Muuzaji

TO-263 (D2PAK)

Kifurushi / Kesi

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Nambari ya Bidhaa ya Msingi

FDB886

Karatasi za Takwimu na Nyaraka

Mchoro wa HTML

Karatasi za data

Jarida la Takwimu

Taarifa za Ziada

Kifurushi cha Kawaida

800

Majina mengine

FDB8860CT

FDB8860DKR

FDB8860TR

2832-FDB8860TR

2156-FDB8860-OS

ONSONSFDB8860

Uainishaji wa Mazingira na Usafirishaji

Hali ya RoHS

ROHS3 Compliant

Kiwango cha Usikivu wa Moisture (MSL)

1 (Unlimited)

Hali ya REACH

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

Digi Cheti

certification_01

certification_02

certification_03

certification_04

certification_015

certification_08

esd

Bidhaa Zinazohusiana

onsemi

FDM3622

MOSFET N-CH 100V 4.4A 8MLP

onsemi

MMBF0201NLT1G

MOSFET N-CH 20V 300MA SOT23-3

onsemi

FDD9409-F085

MOSFET N-CH 40V 90A DPAK

onsemi

FDD6680

MOSFET N-CH 30V 12A/46A DPAK