IXFA6N120P

Nambari ya Bidhaa ya Mtengenezaji:

IXFA6N120P

Product Overview

Mtengenezaji:

IXYS

Nambari ya Kipande:

IXFA6N120P-DG

Maelezo:

MOSFET N-CH 1200V 6A TO263

Maelezo ya Kina:

N-Channel 1200 V 6A (Tc) 250W (Tc) Surface Mount TO-263AA (IXFA)

Hesabu:

3725 Pcs Mpya Halisi Katika Hifadhi

12914108

Omba Nukuu

Kiasi
Kiasi cha chini 1

6J22

(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24

TUMA

IXFA6N120P Maalum ya Kiufundi

Kikundi

FETs, MOSFETs, FET moja, MOSFETs

Mtengenezaji

Littelfuse

Ufungashaji

Tube

Mfululizo

HiPerFET™, Polar

Hali ya Bidhaa

Active

Aina ya FET

N-Channel

Teknolojia

MOSFET (Metal Oxide)

Drain kwa Voltage ya Chanzo (Vdss)

1200 V

Sasa - Drain inayoendelea (id) @ 25 ° C

6A (Tc)

Voltage ya Hifadhi (Max Rds On, Min Rds On)

10V

Rds Kwenye (Max) @ Id, Vgs

2.4Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Malipo ya lango (Qg) (Max) @ Vgs

92 nC @ 10 V

Vgs (Max)

±30V

Uwezo wa kuingiza (Ciss) (Max) @ Vds

2830 pF @ 25 V

Kipengele cha FET

-

Usambazaji wa Nguvu (Max)

250W (Tc)

Joto la Uendeshaji

-55°C ~ 150°C (TJ)

Aina ya Kuweka

Surface Mount

Kifurushi cha Kifaa cha Muuzaji

TO-263AA (IXFA)

Kifurushi / Kesi

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Nambari ya Bidhaa ya Msingi

IXFA6N120

Karatasi za Takwimu na Nyaraka

Mchoro wa HTML

Karatasi za data

IXF(A,P,H)6N120P

Jarida la Takwimu

Taarifa za Ziada

Kifurushi cha Kawaida

50

Majina mengine

IXFA6N120P-CRL

Q13176188

Uainishaji wa Mazingira na Usafirishaji

Hali ya RoHS

ROHS3 Compliant

Kiwango cha Usikivu wa Moisture (MSL)

1 (Unlimited)

Hali ya REACH

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

Digi Cheti

certification_01

certification_02

certification_03

certification_04

certification_015

certification_08

esd

Bidhaa Zinazohusiana

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MOSFET N-CH 200V 170A PLUS247-3

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MOSFET N-CH 100V 7.7A DPAK