IRF3711L

Nambari ya Bidhaa ya Mtengenezaji:

IRF3711L

Product Overview

Mtengenezaji:

Infineon Technologies

Nambari ya Kipande:

IRF3711L-DG

Maelezo:

MOSFET N-CH 20V 110A TO262

Maelezo ya Kina:

N-Channel 20 V 110A (Tc) 3.1W (Ta), 120W (Tc) Through Hole TO-262

Hesabu:

Ombi la Quotations Mtandaoni

12804063

Omba Nukuu

Kiasi
Kiasi cha chini 1

BCOY

(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24

TUMA

IRF3711L Maalum ya Kiufundi

Kikundi

FETs, MOSFETs, FET moja, MOSFETs

Mtengenezaji

Infineon Technologies

Ufungashaji

-

Mfululizo

HEXFET®

Hali ya Bidhaa

Obsolete

Aina ya FET

N-Channel

Teknolojia

MOSFET (Metal Oxide)

Drain kwa Voltage ya Chanzo (Vdss)

20 V

Sasa - Drain inayoendelea (id) @ 25 ° C

110A (Tc)

Voltage ya Hifadhi (Max Rds On, Min Rds On)

4.5V, 10V

Rds Kwenye (Max) @ Id, Vgs

6mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Malipo ya lango (Qg) (Max) @ Vgs

44 nC @ 4.5 V

Vgs (Max)

±20V

Uwezo wa kuingiza (Ciss) (Max) @ Vds

2980 pF @ 10 V

Kipengele cha FET

-

Usambazaji wa Nguvu (Max)

3.1W (Ta), 120W (Tc)

Joto la Uendeshaji

-55°C ~ 150°C (TJ)

Aina ya Kuweka

Through Hole

Kifurushi cha Kifaa cha Muuzaji

TO-262

Kifurushi / Kesi

TO-262-3 Long Leads, I2PAK, TO-262AA

Karatasi za Takwimu na Nyaraka

Mchoro wa HTML

Karatasi za data

Jarida la Takwimu

Taarifa za Ziada

Kifurushi cha Kawaida

50

Majina mengine

*IRF3711L

Uainishaji wa Mazingira na Usafirishaji

Hali ya RoHS

RoHS non-compliant

Kiwango cha Usikivu wa Moisture (MSL)

1 (Unlimited)

Hali ya REACH

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

Digi Cheti

certification_01

certification_02

certification_03

certification_04

certification_015

certification_08

esd

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