Nambari ya Bidhaa ya Mtengenezaji:
IPD50N06S4L08ATMA2
Product Overview
Mtengenezaji:
Infineon Technologies
Nambari ya Kipande:
IPD50N06S4L08ATMA2-DG
Maelezo:
MOSFET N-CH 60V 50A TO252-31
Maelezo ya Kina:
N-Channel 60 V 50A (Tc) 71W (Tc) Surface Mount PG-TO252-3-11
Hesabu:
5818 Pcs Mpya Halisi Katika Hifadhi
13064031
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
97cE
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
IPD50N06S4L08ATMA2 Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
Infineon Technologies
Ufungashaji
Tape & Reel (TR)
Mfululizo
OptiMOS™
Ufungaji
Tape & Reel (TR)
Hali ya Sehemu
Active
Aina ya FET
N-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
60 V
Sasa - Drain inayoendelea (id) @ 25 ° C
50A (Tc)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
4.5V, 10V
Rds Kwenye (Max) @ Id, Vgs
7.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.2V @ 35µA
Malipo ya lango (Qg) (Max) @ Vgs
64 nC @ 10 V
Vgs (Max)
±16V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
4780 pF @ 25 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
71W (Tc)
Joto la Uendeshaji
-55°C ~ 175°C (TJ)
Daraja
Automotive
Uhitimu
AEC-Q101
Aina ya Kuweka
Surface Mount
Kifurushi cha Kifaa cha Muuzaji
PG-TO252-3-11
Kifurushi / Kesi
TO-252-3, DPAK (2 Leads + Tab), SC-63
Nambari ya Bidhaa ya Msingi
IPD50
Karatasi za Takwimu na Nyaraka
Karatasi za data
Taarifa za Ziada
Kifurushi cha Kawaida
2,500
Majina mengine
448-IPD50N06S4L08ATMA2DKR
IPD50N06S4L08ATMA2-ND
INFINFIPD50N06S4L08ATMA2
448-IPD50N06S4L08ATMA2CT
2156-IPD50N06S4L08ATMA2
SP001028664
448-IPD50N06S4L08ATMA2TR
Uainishaji wa Mazingira na Usafirishaji
Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
Hali ya REACH
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
Bidhaa Zinazohusiana
IPF09N03LA
MOSFET N-CH 25V 50A TO252-3
BSZ033NE2LS5ATMA1
MOSFET N-CH 25V 18A/40A TSDSON
BUZ30A
MOSFET N-CH 200V 21A TO220-3
