Nambari ya Bidhaa ya Mtengenezaji:
IPD100N04S402ATMA1
Product Overview
Mtengenezaji:
Infineon Technologies
Nambari ya Kipande:
IPD100N04S402ATMA1-DG
Maelezo:
MOSFET N-CH 40V 100A TO252-3
Maelezo ya Kina:
N-Channel 40 V 100A (Tc) 150W (Tc) Surface Mount PG-TO252-3-313
Hesabu:
4318 Pcs Mpya Halisi Katika Hifadhi
12800231
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
CtnD
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
IPD100N04S402ATMA1 Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
Infineon Technologies
Ufungashaji
Tape & Reel (TR)
Mfululizo
OptiMOS™
Hali ya Bidhaa
Active
Aina ya FET
N-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
40 V
Sasa - Drain inayoendelea (id) @ 25 ° C
100A (Tc)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
10V
Rds Kwenye (Max) @ Id, Vgs
2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 95µA
Malipo ya lango (Qg) (Max) @ Vgs
118 nC @ 10 V
Vgs (Max)
±20V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
9430 pF @ 25 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
150W (Tc)
Joto la Uendeshaji
-55°C ~ 175°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi cha Kifaa cha Muuzaji
PG-TO252-3-313
Kifurushi / Kesi
TO-252-3, DPAK (2 Leads + Tab), SC-63
Nambari ya Bidhaa ya Msingi
IPD100
Karatasi za Takwimu na Nyaraka
Mchoro wa HTML
Karatasi za data
Jarida la Takwimu
Taarifa za Ziada
Kifurushi cha Kawaida
2,500
Majina mengine
IPD100N04S402ATMA1CT
INFINFIPD100N04S402ATMA1
IPD100N04S4-02-DG
SP000646184
2156-IPD100N04S402ATMA1
IPD100N04S402ATMA1DKR
IPD100N04S4-02
IPD100N04S402ATMA1TR
Uainishaji wa Mazingira na Usafirishaji
Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
Hali ya REACH
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
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