Nambari ya Bidhaa ya Mtengenezaji:
IPB70N10S3L12ATMA2
Product Overview
Mtengenezaji:
Infineon Technologies
Nambari ya Kipande:
IPB70N10S3L12ATMA2-DG
Maelezo:
MOSFET_(75V 120V(
Maelezo ya Kina:
N-Channel 100 V 70A (Tc) 125W (Tc) Surface Mount PG-TO263-3-2
Hesabu:
13269513
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
znCX
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
IPB70N10S3L12ATMA2 Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
Infineon Technologies
Ufungashaji
Tape & Reel (TR)
Mfululizo
-
Hali ya Bidhaa
Active
Aina ya FET
N-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
100 V
Sasa - Drain inayoendelea (id) @ 25 ° C
70A (Tc)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
4.5V, 10V
Rds Kwenye (Max) @ Id, Vgs
12.1mOhm @ 70A, 10V
Vgs(th) (Max) @ Id
2.4V @ 83µA
Malipo ya lango (Qg) (Max) @ Vgs
80 nC @ 10 V
Vgs (Max)
±20V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
5570 pF @ 25 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
125W (Tc)
Joto la Uendeshaji
-55°C ~ 175°C (TJ)
Daraja
Automotive
Uhitimu
AEC-Q101
Aina ya Kuweka
Surface Mount
Kifurushi cha Kifaa cha Muuzaji
PG-TO263-3-2
Kifurushi / Kesi
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Taarifa za Ziada
Kifurushi cha Kawaida
1,000
Majina mengine
SP005549661
448-IPB70N10S3L12ATMA2TR
Uainishaji wa Mazingira na Usafirishaji
Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
Hali ya REACH
REACH Unaffected
ECCN
EAR99
Digi Cheti
Bidhaa Zinazohusiana
IMW65R007M2HXKSA1
SILICON CARBIDE MOSFET
IPP034N08N5XKSA1
TRENCH 40<-<100V
IRF9393TRPBFXTMA1
TRENCH <= 40V