Nambari ya Bidhaa ya Mtengenezaji:
IAUT300N08S5N012ATMA2
Product Overview
Mtengenezaji:
Infineon Technologies
Nambari ya Kipande:
IAUT300N08S5N012ATMA2-DG
Maelezo:
MOSFET N-CH 80V 300A 8HSOF
Maelezo ya Kina:
N-Channel 80 V 300A (Tc) 375W (Tc) Surface Mount PG-HSOF-8-1
Hesabu:
1799 Pcs Mpya Halisi Katika Hifadhi
12800365
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
pTcd
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
IAUT300N08S5N012ATMA2 Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
Infineon Technologies
Ufungashaji
Tape & Reel (TR)
Mfululizo
OptiMOS™
Hali ya Bidhaa
Active
Aina ya FET
N-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
80 V
Sasa - Drain inayoendelea (id) @ 25 ° C
300A (Tc)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
6V, 10V
Rds Kwenye (Max) @ Id, Vgs
1.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.8V @ 275µA
Malipo ya lango (Qg) (Max) @ Vgs
231 nC @ 10 V
Vgs (Max)
±20V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
16250 pF @ 40 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
375W (Tc)
Joto la Uendeshaji
-55°C ~ 175°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi cha Kifaa cha Muuzaji
PG-HSOF-8-1
Kifurushi / Kesi
8-PowerSFN
Nambari ya Bidhaa ya Msingi
IAUT300
Karatasi za Takwimu na Nyaraka
Mchoro wa HTML
Karatasi za data
Jarida la Takwimu
Taarifa za Ziada
Kifurushi cha Kawaida
2,000
Majina mengine
IAUT300N08S5N012ATMA2CT
IAUT300N08S5N012CT-DG
IAUT300N08S5N012ATMA2-DG
IAUT300N08S5N012CT
IAUT300N08S5N012
IAUT300N08S5N012DKR-DG
IAUT300N08S5N012DKR
IAUT300N08S5N012ATMA2TR
IAUT300N08S5N012TR-DG
IAUT300N08S5N012TR
IAUT300N08S5N012ATMA2DKR
SP001585160
Uainishaji wa Mazingira na Usafirishaji
Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
Hali ya REACH
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
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IPA60R125C6E8191XKSA1
MOSFET N-CH TO220-3
