Nambari ya Bidhaa ya Mtengenezaji:
BSC039N06NSATMA1
Product Overview
Mtengenezaji:
Infineon Technologies
Nambari ya Kipande:
BSC039N06NSATMA1-DG
Maelezo:
MOSFET N-CH 60V 19A/100A TDSON
Maelezo ya Kina:
N-Channel 60 V 19A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6
Hesabu:
19874 Pcs Mpya Halisi Katika Hifadhi
12799340
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
ok0V
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
BSC039N06NSATMA1 Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
Infineon Technologies
Ufungashaji
Tape & Reel (TR)
Mfululizo
OptiMOS™
Hali ya Bidhaa
Active
Aina ya FET
N-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
60 V
Sasa - Drain inayoendelea (id) @ 25 ° C
19A (Ta), 100A (Tc)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
6V, 10V
Rds Kwenye (Max) @ Id, Vgs
3.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.8V @ 36µA
Malipo ya lango (Qg) (Max) @ Vgs
27 nC @ 10 V
Vgs (Max)
±20V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
2000 pF @ 30 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
2.5W (Ta), 69W (Tc)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi cha Kifaa cha Muuzaji
PG-TDSON-8-6
Kifurushi / Kesi
8-PowerTDFN
Nambari ya Bidhaa ya Msingi
BSC039
Karatasi za Takwimu na Nyaraka
Taarifa za Ziada
Kifurushi cha Kawaida
5,000
Majina mengine
BSC039N06NSTR
BSC039N06NSCT-DG
BSC039N06NSDKR
BSC039N06NSATMA1DKR
BSC039N06NSATMA1CT
BSC039N06NSDKR-DG
BSC039N06NS-DG
BSC039N06NSATMA1TR
SP000985386
BSC039N06NSTR-DG
BSC039N06NS
Uainishaji wa Mazingira na Usafirishaji
Hali ya RoHS
ROHS3 Compliant
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
Hali ya REACH
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
Bidhaa Zinazohusiana
BSO4410
MOSFET N-CH 30V 11.1A 8SO
BSC084P03NS3GATMA1
MOSFET P-CH 30V 14.9A 8TDSON
BSO4410T
MOSFET N-CH 30V 11.1A 8SO
