FCU4300N80Z

Nambari ya Bidhaa ya Mtengenezaji:

FCU4300N80Z

Product Overview

Mtengenezaji:

Fairchild Semiconductor

Nambari ya Kipande:

FCU4300N80Z-DG

Maelezo:

MOSFET N-CH 800V 1.6A I-PAK

Maelezo ya Kina:

N-Channel 800 V 1.6A (Tc) 27.8W (Tc) Through Hole I-PAK

Hesabu:

1000 Pcs Mpya Halisi Katika Hifadhi

12946655

Omba Nukuu

Kiasi
Kiasi cha chini 1

ZPip

(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24

TUMA

FCU4300N80Z Maalum ya Kiufundi

Kikundi

FETs, MOSFETs, FET moja, MOSFETs

Mtengenezaji

Ufungashaji

Bulk

Mfululizo

SuperFET® II

Hali ya Bidhaa

Active

Aina ya FET

N-Channel

Teknolojia

MOSFET (Metal Oxide)

Drain kwa Voltage ya Chanzo (Vdss)

800 V

Sasa - Drain inayoendelea (id) @ 25 ° C

1.6A (Tc)

Voltage ya Hifadhi (Max Rds On, Min Rds On)

10V

Rds Kwenye (Max) @ Id, Vgs

4.3Ohm @ 800mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 160µA

Malipo ya lango (Qg) (Max) @ Vgs

8.8 nC @ 10 V

Vgs (Max)

±20V

Uwezo wa kuingiza (Ciss) (Max) @ Vds

355 pF @ 100 V

Kipengele cha FET

-

Usambazaji wa Nguvu (Max)

27.8W (Tc)

Joto la Uendeshaji

-55°C ~ 150°C (TJ)

Aina ya Kuweka

Through Hole

Kifurushi cha Kifaa cha Muuzaji

I-PAK

Kifurushi / Kesi

TO-251-3 Short Leads, IPak, TO-251AA

Karatasi za Takwimu na Nyaraka

Karatasi za data

FCU4300N80Z Datasheet

Taarifa za Ziada

Kifurushi cha Kawaida

502

Majina mengine

FAIFSCFCU4300N80Z

2156-FCU4300N80Z

Uainishaji wa Mazingira na Usafirishaji

ECCN

EAR99

HTSUS

8542.39.0001

Digi Cheti

certification_01

certification_02

certification_03

certification_04

certification_015

certification_08

esd

Bidhaa Zinazohusiana

international-rectifier

IRF40DM229

MOSFET N-CH 40V 159A DIRECTFET

infineon-technologies

BSC091N03MSCGATMA1

POWER FIELD-EFFECT TRANSISTOR, 1

fairchild-semiconductor

FDC654P

SMALL SIGNAL FIELD-EFFECT TRANSI

diodes

BSS127SSN-7

MOSFET N-CH 600V 50MA SC59