Nambari ya Bidhaa ya Mtengenezaji:
DMT67M8LK3-13
Product Overview
Mtengenezaji:
Diodes Incorporated
Nambari ya Kipande:
DMT67M8LK3-13-DG
Maelezo:
MOSFET BVDSS: 41V~60V TO252 T&R
Maelezo ya Kina:
N-Channel 60 V 87A (Tc) 3.1W (Ta), 89.3W (Tc) Surface Mount TO-252 (DPAK)
Hesabu:
13000804
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
CUlj
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
DMT67M8LK3-13 Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
Diodes Incorporated
Ufungashaji
Tape & Reel (TR)
Mfululizo
-
Hali ya Bidhaa
Active
Aina ya FET
N-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
60 V
Sasa - Drain inayoendelea (id) @ 25 ° C
87A (Tc)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
4.5V, 10V
Rds Kwenye (Max) @ Id, Vgs
7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Malipo ya lango (Qg) (Max) @ Vgs
37.5 nC @ 10 V
Vgs (Max)
±20V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
2130 pF @ 30 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
3.1W (Ta), 89.3W (Tc)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi cha Kifaa cha Muuzaji
TO-252 (DPAK)
Kifurushi / Kesi
TO-252-3, DPAK (2 Leads + Tab), SC-63
Karatasi za Takwimu na Nyaraka
Karatasi za data
Taarifa za Ziada
Kifurushi cha Kawaida
2,500
Majina mengine
31-DMT67M8LK3-13TR
Uainishaji wa Mazingira na Usafirishaji
Hali ya RoHS
ROHS3 Compliant
Hali ya REACH
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
Bidhaa Zinazohusiana
NTTFS012N10MDTAG
PTNG 100V LOW Q 12MOHM N-FET, U8
DMN1008UFDFQ-7
MOSFET BVDSS: 8V~24V U-DFN2020-6
TSM650P03CX
-30V, -4.1A, SINGLE P-CHANNEL PO
